• Double-sided passivation film, Low surface recombination
• With laser doping of selective p-n junction formation, SE technology and the PERC technology perfect union
• High conversion efficiency resulting in superior power output performance
• Outstanding power output even in low light conditions
• Optimized design for ease of soldering and lamination
• Long-term stability, reliability and performance
• Low breakage rate
• Color uniformity
Characteristics
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Appearance：
|
Dimension |
156.75mm±0.25mm； |
|
Diagonal |
φ210mm±0.5mm； |
|
Silicon model |
P type monocrystalline silicon |
|
Thickness |
200μm±30μm |
|
Front |
Alkali texture etch,blue silicon nitride anti-reflection coatings,5 silverbusbar, 0.7±0.05mm silver busbar |
|
Back |
Aluminum oxide, silicon oxynitride and silicon nitride composite passivation film, Full-surface aluminum back-surface field, 1.7±0.1mm ( silver / aluminum )discontinuous soldering pads |
Production and Quality control：
- Precision cell efficiency sorting procedures；Stringent criteria for color uniformity and appearance；Reverse current and shunt resistance screening；ISO9001,ISO14001 and OHSAS 18001 certified
Drawings：
Electrical Performance：
|
Gear |
Conversion efficiency rating（%） |
Pm（W） |
Voc（V） |
Isc（A） |
Vm（V） |
Im（A） |
|
22.0 |
≥22.00 |
5.38 |
0.683 |
9.769 |
0.58 |
9.275 |
|
21.9 |
≥21.90~22.00 |
5.35 |
0.682 |
9.764 |
0.578 |
9.26 |
|
21.8 |
≥21.80~21.90 |
5.33 |
0.615% |
9.751 |
0.576 |
9.247 |
|
21.7 |
≥21.70~21.80 |
5.30 |
0.679 |
9.74 |
0.574 |
9.238 |
|
21.6 |
≥21.60~21.70 |
5.28 |
0.677 |
9.728 |
0.572 |
9.228 |
|
21.5 |
≥21.50~21.60 |
5.25 |
0.675 |
9.721 |
0.57 |
9.217 |
|
21.4 |
≥21.40~21.50 |
5.23 |
0.673 |
9.712 |
0.568 |
9.208 |
|
21.3 |
≥21.30~21.40 |
5.21 |
0.671 |
9.701 |
0.566 |
9.197 |
|
21.2 |
≥21.20~21.30 |
5.18 |
0.67 |
9.612% |
0.565 |
9.168 |
|
21.1 |
≥21.10~21.20 |
5.16 |
0.668 |
9.683 |
0.564 |
9.15 |
|
21 |
≥21.00~21.10 |
5.13 |
0.666 |
9.672 |
0.562 |
9.132 |
|
20.9 |
≥20.90~21.00 |
5.11 |
0.665 |
9.655 |
0.561 |
9.111 |
|
20.8 |
≥20.80~20.90 |
5.08 |
0.663 |
9.643 |
0.56 |
9.078 |
|
20.7 |
≥20.70~20.80 |
5.06 |
0.662 |
9.611 |
0.558 |
9.065 |
|
20.6 |
≥20.60~20.70 |
5.03 |
0.66 |
9.589 |
0.556 |
9.053 |
*Test condition : AM1.5, 1000W/m2 , 25℃. Average accuracy of all tested figures is ±1.5% rel；
Temperature coefficients：
|
Current temperature coefficient |
α(Isc) |
+0.06 %/℃ |
|
Voltage temperature coefficient |
β(Voc) |
-0.36%/℃ |
|
Power temperature coefficient |
γ(Pmax) |
-0.36%/℃ |
*Test condition : AM1.5, 1000W/m2 , 25℃；
Solderability：
|
Peel strength |
≥1.4N/mm |
The above can be obtained by soldering iron an 300℃-400℃,with UZON regular flux and ribbon. |
*howeverthis may vary due to different flux, ribbons soldering methods and parameters used by the customers.；
• Monocrystalline silicon PERC solar cells BSC156.75B5 specification instructions，Click to download ↓↓↓
